Abstract:
In this work, we present a parameter extraction method for TiO2 memristive devices that applies on a resistive switching rate model which embodies only four parameters fo...Show MoreNotes: This article was originally incorrectly tagged as not presented at the conference. It is now included as part of the conference record.
Metadata
Abstract:
In this work, we present a parameter extraction method for TiO2 memristive devices that applies on a resistive switching rate model which embodies only four parameters for each voltage biasing polarity. The simple form of the model functions allows the derivation of a predictive analytical resistive state response expression under constant bias voltage. By employing corresponding experimental testing on the devices, we fit such constant bias responses exhibited by physical memristor samples on this analytical expression. Next, we apply a simple algorithm that extracts the suitable model parameters that capture the switching rate behavior of the characterized device in its voltage range of operation.
Notes: This article was originally incorrectly tagged as not presented at the conference. It is now included as part of the conference record.
Date of Conference: 28-31 May 2017
Date Added to IEEE Xplore: 07 November 2017
ISBN Information:
Electronic ISSN: 2379-447X
Contents 