4 × 56 Gb/s High Output Power Electroabsorption Modulated Laser Array With up to 7 km Fiber Transmission in L-Band

We present a novel array of electroabsorption modulated lasers as compact and low-cost single-chip solution for future 200 Gb/s transmitters. The array is designed for high optical output power with semiconductor optical amplifiers at the front side of the chip. A common InGaAlAs-MQW active layer structure allows for simple and cost-effective monolithic integration. On chip RF transmission lines are implemented to bring all electrical contacts to the rear side of the array-chip which supports packaging with short wire bonds. The array operates at four different wavelengths spanning over 7.5 nm in the L-band. Uniformity of each wavelength channel is experimentally proven regarding modulation bandwidth >30 GHz, extinction ratio >7 dB, and output power up to 8 dBm. The influence of the semiconducting optical amplifiers on signal quality is investigated by back to back bit error ratio measurements. In transmission experiments over standard single mode fiber links, the array's performance at 4 × 56 GBd NRZ and 4 × 28 GBd PAM4 is demonstrated and the arrays capability for up to 7 km transmission in case of PAM4 signaling is shown.