DC and RF characterization of RF MOSFET embedding structure

It is not so easy to correlate DC Kelvin measurement data of an RF transistor and its non-Kelvin RF measurement data, because the actual bias voltages in the latter are not known precisely. Knowing the bias voltages requires accurate characterization of its embedding structure. This paper reports on an attempt at correlating DC and RF measurements of parasitic resistances associated with a MOSFET test structure, including a transmission line, on a CMOS chip.