Design of a Broadband CMOS RF Power Amplifier to establish device-circuit aging correlations

This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation between the degradation of circuit's RF performances and those of its individual devices parameters. The test structure, measurement set-up and procedure are described in detail.