Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS2 field-effect-transistors

Greek crosses and TLM test structures were fabricated and characterized along with top-gate field effect transistors. We also show the usefulness and adaptation of a single TLM structure into multiple bottom-gate FETs that allow for extraction of contact resistance and typical device parameters for direct correlation on the same TMD flake enabling very little variability that can occur “flake to flake”. Sheet resistance and contact resistance were successfully extracted and improvement in device performance was demonstrated with C-V and I-V measurements.