High Quantum Efficiency Uni-Traveling-Carrier Photodiode

We report uni-traveling-carrier photodiodes with a quantum efficiency of 98% ±0.8% at 1064 nm. For 50 μm devices, the measured 3-dB bandwidth is 2 GHz and the dark current is 10 nA at a bias voltage of -5 V. The dark current is dominated by generation-recombination at a bias voltage of -10 V and the activation energy is 0.23 eV. At higher bias voltage, tunneling becomes a significant component of the dark current.