Impact of Local High‐κ Insulator on Drivability and Standby Power of Gate‐All‐Around SOI MOSFET

In this chapter we study the impact of a local high‐k gate insulator on the drivability and off‐current of a gate‐all‐around (GAA) silicon‐on‐insulator (SOI) metal oxide semiconductor field‐effect transistor (MOSFET). The replacement of part of the gate SiO
₂
film with a thick high‐k insulator (for example, HfO
₂
) results in the high drivability of the GAA MOSFET, which stems from the lateral extension of high gate‐induced potential. A simulation was performed to determine the optimal width of the high‐k insulator in order to realize the best performance. In addition, simulation results reveal that the parasitic resistance of the low‐doped source and drain diffusion region is markedly reduced by the lateral extension of gate‐induced potential because the cross section of the silicon wire is very small.