Abstract:
MOSFETs with different drain and source series resistance, R/sub D/ and R/sub S/, are common both in medium and high power technologies and in deep submicron technologies...Show MoreMetadata
Abstract:
MOSFETs with different drain and source series resistance, R/sub D/ and R/sub S/, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of R/sub D/-R/sub S/. This paper presents the concept and the results of a new, simple, and physical extraction technique to determine R/sub D/-R/sub S/ purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling.
Published in: ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)
Date of Conference: 15-18 March 1999
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5270-X
