Limitations of bulk SiC photoconductive semiconductor switches, and evaluation of PIN SiC photoconductive semiconductor switches

A comprehensive picture of the relationship between optical fluence, optical wavelength, system load, and photocurrent efficiency (PE) in SiC photoconductive semiconductor switches (PCSSs) is presented. Variation of the optical wavelength (300-380 nm) and optical fluence (0.2-200 J m
^-2
) was accomplished with a Nd:YAG pumped optical parametric oscillator (7 ns FWHM) and a broadband variable attenuator. The PE was found to typically be in the range of 1-2 %, depending on wavelength, and the bulk PCSS on-state voltage driven by external circuit parameters. Features of the high electric field stress behavior (> 200 kV/cm) of the bulk PCSS were captured with high fidelity in a 1D drift-diffusion model with a self-consistent Poisson solver including trap assisted tunneling, Poole-Frenkel, and barrier lowering with enhanced tunneling effects. In addition, trap to band impact ionization as well as Coulombic and repulsive trapping potentials were included.