Novel test structure for evaluating dynamic dopant activation after ion implantation

This work focuses on the development of a novel test structure to evaluate the dynamic behavior of electrical characteristics in the boron-implanted germanium samples during the solid phase epitaxial regrowth (SPER) at low temperature annealing of 360 and 400 °C with various annealing times ranging from 30 to 300 min. In the early stage of SPER annealing, the sheet carrier concentration is increased with annealing time. And then, it will saturate to a level after about 2 hr annealing which implies the completion of SPER process.