Influence of additional drain currents on response of CMOS terahertz detectors

We investigate the influence of additional dc current on response of CMOS THz detectors. A resistive self-mixing model calculation, shows that the voltage response of CMOS detectors increases significantly by applying a small dc current on the drain side of CMOS device. The calculation results are further verified by the experimental data from CMOS detectors at 0.65THz. The maximum voltage response increases by one order of magnitude in the dc current mode. The results suggest that the additional dc current bias method is the most direct way for improving the response of CMOS THz detectors.