Fabrication of monolayer-thick InN/InGaN single-quantum-well structures emitting at 1.55μm

In-polarity InN/In
_0.85
Ga
_0.15
N monolayer-thick single quantum well (SQW) was fabricated on a Ga-polarity GaN template by radio-frequency plasma-assisted molecular beam epitaxy. The morphology of the sample was studied using reflection high energy electron diffraction(RHEED) and atomic force microscope (AFM). The RHEED showed very streaky, and the rms of AFM showed atomically flat which is 0.57nm. The In component of the sample was demonstrated by XRD (2θ-ω), the peak of InGaN at 2 Theta equal to 31.5 was clear, which means In
_0.85
Ga
_0.15
N has been grown. Due to the thickness of the InN well is very thin, it cannot been seen in the XRD. However, the clear image of monolayer InN well has been shown in Scanning transmission electron microscopy (STEM). Both the lower and upper quantum well interface appeared to be abrupt. The spectral output characteristics was demonstrated by RT-photoluminescence (PL). A strong peak at 1.55μm of SQW and another peak of InGaN at 1.5μm at room temperature have been made, which was a progress of III-nitrides semiconductor to get the monolayer-thick InN/InGaN SQW emitting at telecom wavelength.