Analysis of a new test pattern for measuring the carrier-carrier scattering mobilities versus injection level in silicon

A recently proposed technique for determining injection-dependent carrier mobilities is explored and enhanced. Better control of the injection level is obtained by adding a new feature to the basic test pattern for direct estimation of the carrier density operated by the measure. In particular, numerical simulation of the measurement approach allows us to quantify the effect of the parasitic capacitance and the test pattern geometry on the mobility measurement.