Advanced characterization method for sub-micron DRAM cell transistors

An advanced characterization method for sub-micron DRAM cell transistors has been proposed for analysis of transistor test structures with actual memory cell patterns. In this method, new transistor parameters, V/sub goff/ and V/sub gsat/, have been considered for transistors' off-leakage and full writing to storage node, respectively. These parameters are found to be good monitoring parameters for DRAM failures such as bit failures.