On wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic bench and demonstrating available power in the range of -30 dBm. Its noise output power has been then measured using a noise receiver working in the W band in order to determine this photonic noise source Excess Noise Ratio (ENR). After refined measurements and calculations, it turns out that its ENR was found in the range of 30 dB in the W band, confirming the potential of this device to be used as a noise source.