Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies

The accurate determination of the emitter series resistance R
_E
has been topic for numerous investigations throughout the development of modern bipolar device technologies. A good knowledge of the parasitic resistances of the device under test is important due to the apparent voltage drops over these resistors in high current operation. Opposed to the base and collector resistance today there are no appropriate individual test structures that allow for a precise determination of the emitter resistance. In this work we present the application of a new extraction method to a recent SiGeC HBT device technology for mmW applications. The new method allows a precise parameter determination of the desired resistance values without adding additional cost for a dedicated test structure.