A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces | IEEE Conference Publication | IEEE Xplore

A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si and TiN/Ti/p/sup +/Si interfaces


Abstract:

A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geo...Show More

Abstract:

A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/n/sup +/Si, TiN/Ti/n/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.<>
Date of Conference: 05-07 March 1990
Date Added to IEEE Xplore: 06 August 2002
Conference Location: San Diego, CA, USA

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