Full and automated determination of MOS transistor parameters in the linear region

A measurement technique is presented which allows the determination of all the parameters needed to describe the linear behavior of an MOS transistor which is valid for a large range of gate voltages and drawn lengths. Analytical models can be derived from these results and introduced in simulators for mobility and access resistance. A comparison of different measurement techniques used to obtain the effective gate length is given. It is demonstrated that one simple equation is sufficient to calculate with the good precision the current in the linear region. All the techniques were implemented in a S450 Keithley parametric tester.<
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