Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs | IEEE Conference Publication | IEEE Xplore

Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs


Abstract:

We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from t...Show More

Abstract:

We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
Date of Conference: 22-25 October 2013
Date Added to IEEE Xplore: 23 January 2014
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Conference Location: Xi'an, China

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