Abstract:
We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from t...Show MoreMetadata
Abstract:
We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.
Date of Conference: 22-25 October 2013
Date Added to IEEE Xplore: 23 January 2014
ISBN Information: