New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor

We have developed a new test method for evaluating low-k materials. The method uses two kinds of new test structures. One is a modified gated pn-junction diode and the other is a modified field MOS transistor. Three kinds of low-k materials were evaluated by using the test structures, and electrical characteristics for these materials were successfully measured. The advantage of the new method was discussed.