A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10^-17 - 10^-17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 1×10^-18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.