Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.