Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substrates

Microwave frequency performance of silicon MOSFETs depends not only on the process but also on gate resistance and parasitic capacitances which are layout dependent. MOSFET transistors with different finger widths on a silicon epi-wafer have been measured from 50 MHz to 10 GHz. An equivalent circuit model of an optimum transistor layout for high frequency performance up to 10 GHz is presented.