Flicker Noise Reduction in GaN FieldEffect Transistors

Heterostructure field-effect transistors (HEFTs) based on wide-bandgap compound semiconductors such as GaN have demonstrated potential for high-power density and high-frequency device applications. In this chapter the authors review results of experimental investigation of the noise in GaN HFETs fabricated using different growth techniques and device processing methods. They examine the sources of noise in these transistors and present some methods, that allow us to reduce the noise in these devices. Effects of doping, deep levels, piezoelectric charges, potential barrier profile, and device dimensions are also discussed.