The low-power-drain microelectronic VHF amplifier

Low-power-drain VHF amplifiers have some unique characteristics when they are miniaturized. And, if the design is special-requiring tight tolerances or intended for limited-quantity production-it is often desirable to make the RF micropower circuits from discrete components. Described in this article are the first-order device requirements and circuit considerations for such VHF amplifiers incorporating bipolar transistors operating at collector currents as low as 25 μA. Two specific designs are offered, along with information pertinent to their construction.