Abstract:
Gate antenna structures have been developed to detect charge induced process damage to sub-micron gate oxide. For the first time, this damage is correlated with product f...Show MoreMetadata
Abstract:
Gate antenna structures have been developed to detect charge induced process damage to sub-micron gate oxide. For the first time, this damage is correlated with product failure due to gate oxide in accelerated life testing. These antenna structures are thus proven to be useful for wafer level gate oxide reliability screening.
Date of Conference: 22-25 March 1995
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2065-4
