New method for non destructive snap-back characterization in multi-finger power MOSFETs

A non destructive conductance-based electrical characterization method of the snap-back phenomenon has been implemented to investigate multi-finger power MOSFETs. The context of our study is presented, then the specific test structures and the measurement methodology are shown. The robustness and repeatability of our approach is demonstrated on a variety of power MOSFETs regarding to some technological parameters. Comparisons between our results and the ones issued from a destructive characterization are also drawn. The temperature's influence on snap-back is evidenced as well as the measurement's repeatability.