Impact of layout and process on RF and analog performances of 3D damascene MIM capacitors

RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si
₃
N
₄
dielectric in the copper back-end of a 0.13 μm BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.