Loading [a11y]/accessibility-menu.js
A Continuous Model for MOSFET VT Matching Considering Additional Length Effects | IEEE Conference Publication | IEEE Xplore
Subscribe
ADVANCED SEARCH
Conferences >2007 IEEE International Confe...

A Continuous Model for MOSFET VT Matching Considering Additional Length Effects

PDF
Samuel Bordez; Augustin Cathignol; Krysten Rochereau
All Authors

Abstract:

MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities a...Show More

Metadata

Abstract:

MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities are observed. In this paper, a continuous matching model with only two parameters is given. It is obtained by analyzing impact of short channel effects on matching degradation.
Published in: 2007 IEEE International Conference on Microelectronic Test Structures
Date of Conference: 19-22 March 2007
Date Added to IEEE Xplore: 25 June 2007
ISBN Information:

ISSN Information:

DOI: 10.1109/ICMTS.2007.374489
Conference Location: Bunkyo-ku, Japan
Contents

Contact IEEE to Subscribe

References

References is not available for this document.

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2025 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.