Analog characterization of dielectric relaxation of MIM capacitor using an improved recovery voltage technique

Dielectric relaxation of capacitor plays an important role in determining the accuracy of analogue sampled-data systems that are based on charge storage, e.g. charge-redistribution A/D converters. To perform an accurate characterization of the dielectric relaxation of MIM capacitor, a technique based on voltage recovery principle has been developed, in which the effects of parasitic capacitance, leakage and mismatch on the characterization have been well minimized or canceled. The technique is proven to be highly accurate and flexible, while maintaining low cost.

I. Introduction

Precise analogue characterization and modelling of the dielectric relaxation of metal-insulator-metal (MIM) capacitor is very important for high performance technology, since it is a key building block for mixed signal design [1]. Indeed, as the MIM capacitor features high capacitance density, good voltage linearity, and a high quality factor, it is used widely in all kinds of mixed signal circuits, such as ADC's, VCO's, integrators, DRAM, etc.