Measurement of misalignment using a triangular MOS transistor

A new device based on current measurements for misalignment determination is presented. The theoretical study and experimental results demonstrate that the obtained values are independent of the bias. A simple setup, using only an HP-4145B or similar measuring device, is enough for the complete Delta x and Delta y determination. Two structures with different geometries were designed. A batch of wafers was processed, and the results of the measurements show that the misalignment obtained is independent on the geometry. Several advantages with respect to the classic resistive structures are pointed out.<
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