Full characterization of MOS transistors in CMOS technologies

A description is given of a test sequence leading to the knowledge of the different parameters of a MOS transistor. The ultimate step is the statistical analysis of the results obtained when the program has run on a lot. Results are summarized in tables indicating minimum, mean, maximum, and standard deviation values or in some other representations as trend charts. The regression methods are performed on the four transistors of 1.2- mu m, 1.4- mu m, 1.6- mu m, and 2.0- mu m drawn lengths in order to avoid the short-channel effect. Another powerful representation given is the wafer map of a parameter. All the results provided by the test program are stored in ASCII files and can be easily used with statistical analysis software.<
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