Error correction in high-frequency "on-wafer" measurements

A new de-embedding procedure for GHz "on-wafer" probing is presented. The parasitics associated with the bond-pad figure are modeled generally by two-port networks. Thus, no equivalent circuits in detail are required. As well as being simple, the proposed procedure is not dependent on the bond-pad patterns used and applies to any type of wafer substrates, including the conductive Si substrate. Both the measurements and simulations have demonstrated the capability of the model used for the error correction at high frequencies.<
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