A new effective channel length determination method for LDD MOSFETs

A novel effective channel length (L/sub eff/) determination method applicable to LDD (lightly doped drain) MOSFETs is described. The new L/sub eff/, which is determined as a constant that minimizes bias-dependent dispersion of external resistance, is suited for representing device performance, both in linear and saturation regions. In addition, the bias-dependent L/sub eff/ previously proposed is discussed and compared with metallurgical channel length. The idea of a local contribution factor to effective channel length is presented for analysis of these methods.<>