Test SRAMs for characterizing alpha particle tracks in CMOS/bulk memories

Describes a methodology for using alpha particles to provide an independent measure of the cross section of an upset sensitive region in test SRAMs (static random-access memories). In addition, the thickness of over-layers and the alpha-particle collection depth were determined. These parameters are necessary in order to make precise estimates of the upset rates of memories due to cosmic-ray strikes. Measurements were made on 1.6- mu m n-well CMOS 4-kb test SRAMs irradiated with an Am-241 alpha-particle source.<
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