Loading [MathJax]/extensions/MathMenu.js
Evaluation of gate oxide reliability using luminescence method | IEEE Conference Publication | IEEE Xplore

Evaluation of gate oxide reliability using luminescence method


Abstract:

This system permits measurements of the initial breakdown characteristics, determination of the stress condition, and failure analysis consistently based on the evaluatio...Show More

Abstract:

This system permits measurements of the initial breakdown characteristics, determination of the stress condition, and failure analysis consistently based on the evaluation theory. The failure modes both in initial characteristics and the time-dependent dielectric breakdown (TDDB) characteristics are experimentally found to correspond to each other. The intrinsic breakdown is considered to be caused by the concentration of the current in the edge region. The LOCOS structure plays an important role in the lifetime of the gate oxide.<>
Date of Conference: 18-20 March 1990
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-87942-588-1
Conference Location: Kyoto, Japan

Contact IEEE to Subscribe

References

References is not available for this document.