Test structures and measurement of gate sidewall junction capacitance in MOSFETs

A simple method of measuring the gate sidewall capacitance (c/sub jg/) in MOSFETs is presented. C/sub jg/ measurement of a short-channel transistor (Lmin = 40 nm) was successfully achieved by 2-port S-parameter measurement. Furthermore, a merging of source and drain depletion layers and an increase in substrate resistance, both caused by expansion of source and drain depletion layers, were observed through C/sub jg/ measurement for the first time.