Design of CMOS low-noise amplifier for low-band ultra-wideband system

In this paper, a low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of two shunt-peaked cascode amplifiers and it is fabricated in 0.18/spl mu/m standard RF CMOS process. The LNA gives 18.03dB gain and 1.9GHz 3dB bandwidth (3.1-5.0GHz) while consuming 25.92mW through a 1.8V supply. Over the 3.1-5.0GHz frequency band, a minimum noise figure of 2.74dB and input return loss lower than -9.6dB have been achieved.