A test structure for spatial analysis of hot-carrier-induced photoemission in n-MOSFET

A test structure and method for two-dimensional analysis of hot-carrier-induced photoemission in n-MOSFETs are presented. Photoemission intensity profiles along the gate width direction are analyzed and a method to derive the precise peak position of photoemission intensity from the center of the MOSFET gate is proposed. It can measure the variation of the photoemission peak position along the gate width direction. The peak exists in the LDD region, and the distance from the gate edge is about 20/spl sim/30 nm independent of V/sub G/.