Transistor test structures for leakage current analysis of partial SOI

A new test structure to directly measure the junction leakage current between the channel and source/drain region is developed with partially-insulated structure. Si/SiGe epitaxial growth and selective SiGe etch process are used to form PiOX (Partially-Insulating OXide) under source and drain. With this structure, the junction leakage current between source/drain and substrate is diminished and the leakage current component from channel region and source/drain is easily measured.