New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves

We have developed a new device structure for high-performance and high-power mixed signal LSIs using 0.35 /spl mu/m SOI complementary bipolar transistors. The new structure is composed of array transistors for various operating currents and a flexible U-groove layout for high-power transistors. Thermal simulation and test structure measurements showed the advantage of the new structure quantitatively.