Abstract:
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be ...Show MoreMetadata
Abstract:
The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.
Published in: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)
Date of Conference: 22-25 March 2004
Date Added to IEEE Xplore: 06 July 2004
Print ISBN:0-7803-8262-5
Contents 