A novel method to obtain 3-port network parameters from 2-port measurements [MOSFET example]

The two-port description of a four-terminal device like a MOSFFT is incomplete. For complete analysis and at higher frequencies, four terminal characteristics have to be obtained. We describe a simple and novel measurement technique to obtain the complete description from two-port measurements on a single test structure. No extra test structures are needed in this procedure. Such measurements are reported for the first time for a MOSFET.