Microshield transmission line and spiral inductor integrated on polymer thick film

Newly proposed microshield transmission line and spiral inductor are developed on CMOS grade silicon substrate using polymer thick film as a supporter for signal line. The fabricated microshield line shows maximum available gain of less than -0.12dB/mm and return loss of larger than 17dB up to 40GHz. Due to its microshield structure, the coupling from the neighboring signal line is less than -70dB from 0.5GHz to 25GHz. For the inductor of 3.62nH, self resonant frequency of 14.5GHz, and maximum quality factor (Q) of 15.5 at 5.5GHz are obtained. Because the fabrication process is compatible with the conventional standard silicon IC process, it is applicable to silicon RF IC. Multichip module (MCM) package for high performance is also a good branch for these packaging devices.