Abstract:
For the first time, DC characteristics of conventional 50 nm MOSFETs have been correctly simulated by a BSIM4.1 model. This paper briefly describes the conventional archi...Show MoreMetadata
Abstract:
For the first time, DC characteristics of conventional 50 nm MOSFETs have been correctly simulated by a BSIM4.1 model. This paper briefly describes the conventional architecture of the devices, and then the related strategy for parameter extraction is depicted. Typical simulation results are shown, illustrating that reverse short channel and 2D charge sharing effects are well fitted by this compact model.
Published in: Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.
Date of Conference: 11-11 April 2002
Date Added to IEEE Xplore: 08 April 2003
Print ISBN:0-7803-7464-9
Contents 