Real-time electrical measurements during laser attack on STT-MRAM

The goal of the study is to monitor the device’s response during laser injection while being able to track pre- and post-attack conditions. We show the irradiation power affects the STT-MRAM behavior. Our electrical/optical setup enables to know the memory cell behavior to study real-time laser attack countermeasures and device reliability. We have highlighted the possibility to switch, to degrade or even to destruct the cell, depending on the laser power.