L-band 1000W Single Chip Quasi Monolithic GaN Broadband Amplifier for Communication

Based on the 0.5µm GaN process platform of N anjing Electronic Devices Institute, a broadband microwave power amplifier for wireless communication is designed by using a 175mm GaN power HEMT. The output matching circuit adopts ceramic chip multi-level matching, and the input matching circuit adopts GaAs quasi monolithic technology. In the frequency band of 1.1-1.6GHz, with 100µs pulse width and 10% duty cycle, the pulse output power of the amplifier is greater than 1000W at 65V drain voltage, the power gain is greater than 14dB, and the power added efficiency is greater than 68%, realizing excellent microwave performance.