First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability

Quasi-planar segmented-channel MOSFETs (SegFETs) with gate lengths down to
$\sim$
45 nm are fabricated using a conventional process flow by starting with a corrugated-silicon substrate. In comparison with control devices (fabricated using the same process flow, but with a planar-silicon substrate), the SegFETs show reduced short-channel effect due to enhanced electrostatic integrity. Despite having a smaller physical channel width, the SegFET can achieve comparable drive current per unit layout area as the conventional planar MOSFET design.