<![CDATA[ IEEE Microwave and Wireless Components Letters - new TOC ]]>
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TOC Alert for Publication# 7260 2018July 09<![CDATA[Table of contents]]>287C1C4206<![CDATA[IEEE Microwave and Wireless Components Letters publication information]]>287C2C293<![CDATA[Theoretical Investigation of the Reflection From Impedance Absorbing Boundary Conditions]]>287543545462<![CDATA[Systematic Cell-by-Cell FDTD Subgridding in 3-D]]>287546548487<![CDATA[Compact Printed Ridge Gap Waveguide Crossover for Future 5G Wireless Communication System]]>$1.5 lambda times 1.5 lambda $ at 30 GHz. This includes the first two rows of cells around the middle junction. The proposed design is fabricated and measured. The measured results demonstrate that the insertion loss is about 0.5 dB over 13.33% operating bandwidth. The measured and simulated results are in good agreement.]]>287549551845<![CDATA[Broadband <inline-formula> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula>-Band WR12 to Microstrip Line Transition Using a Ridge Structure on High-Permittivity Thin-Film Material]]>$varepsilon _{r} = 9.9$ and $h = 127 ,,mu text{m}$ ) is presented and analyzed. The proposed configuration uses a gradually extending metal ridge over a thin-film MSL to ensure electric field transformation, and an accurate impedance matching, while maintaining a good electrical contact, without any soldering or gluing. The fabricated prototype has been successfully tested in terms of insertion and return losses. The obtained results exhibit a bandwidth of more than 37% at −10 dB with an insertion loss of 1.5–2.7 dB, over the entire 60–90-GHz frequency band. The design simplicity and suitability for high-permittivity thin-film substrates, as well as the very broadband operation capability, enable it to be easily integrated with various planar monolithic microwave integrated circuits/miniaturized hybrid microwave integrated circuits microstrip circuits for different millimeter-wave applications.]]>287552554790<![CDATA[Dispersion-Minimized Rod and Tube Dielectric Waveguides at <inline-formula> <tex-math notation="LaTeX">$W$ </tex-math></inline-formula>-Band and <inline-formula> <tex-math notation="LaTeX">$D$ </tex-math></inline-formula>-Band Frequencies]]>$W$ -band and $D$ -band frequencies. As a result, design guidelines for dispersion-minimized DWGs are presented. Finally, a dispersion-minimized tubular DWG was realized and measured to prove the results of the optimization.]]>2875555571341<![CDATA[A Rasorber-Like Waveguide Based on Thin Film]]>287558560786<![CDATA[Rectangular Waveguide Cross-Guide Couplers: Accurate Model for Full-Band Operation]]>287561563912<![CDATA[Compact Multilayer Half Mode Substrate Integrated Waveguide 3-dB Coupler]]>0.5,0 mode in HMSIW and dual-layer structure to reduce the size of component. This letter also theoretically proposes a relationship between SIW and HMSIW broad wall coupler with the same coupling section, which can obviously simplify the design procedure and maintain stable coupling differences. Meanwhile, this coupler shows a 3-dB coupling over a wide bandwidth with a single row of only five small apertures, which needs more in SIW and waveguide circuits. In long term, the method of cutting SIW components along magnetic wall to get HMSIW components can also play an important role in the future design, especially in size reduction and performance improvement of the circuits. Simulation results are in agreement with the measured data.]]>287564566916<![CDATA[A Continuously Tunable Unequal Power Divider With Wide Tuning Range of Dividing Ratio]]>2875675691005<![CDATA[Design of the Filtering Power Divider With a Wide Passband and Stopband]]>287570572889<![CDATA[A Low-Loss Design of Bandpass Filter at the Terahertz Band]]>287573575667<![CDATA[Bandpass Filter Using Three Pairs of Coupled Lines With Multiple Transmission Zeros]]>$lambda _{g}/4$ coupled length and sandwiched between the $3lambda _{g}/4$ input and output feedlines. Good out-of-band suppression and sharp roll-off skirts can be realized by multiple fixed and tunable TZs without complicated coupling scheme. For further demonstration, a filter example with center frequency at $f_{0}= 2.1$ GHz is implemented with generation of eight TZs at the frequency range from 0 to $2f_{0}$ for theoretically calculated certification. Good agreement between simulation and measured results validates the design method.]]>287576578819<![CDATA[Ultra-Wideband Ridged Half-Mode Folded Substrate-Integrated Waveguide Filters]]>2875795812730<![CDATA[Hybrid Bandpass-Absorptive-Bandstop Magnetically Coupled Acoustic-Wave-Lumped-Element-Resonator Filters]]>2875825841544<![CDATA[Two Types of Trisection Bandpass Filters With Mixed Cross-Coupling]]>$f_{0}$ is determined. A position of these transmission zeros with respect to $f_{0}$ is expressed in terms of the coupling coefficients. The results of the measurements and the simulation are presented.]]>287585587575<![CDATA[Superconducting Wideband Bandpass Filter Based on Triple-Mode Resonator]]>$f_{c}$ ) with 111% 3-dB fractional bandwidth and has an upper stopband to 3.5 $f_{c}$ . The measured results show that the return loss is larger than 15 dB, and the insertion loss is less than 0.26 dB.]]>287588590833<![CDATA[A Novel Dielectric Strip Resonator Filter]]>$Q_{u}$ ) of the proposed resonator can be improved significantly, especially at high frequency. Meanwhile, the proposed resonator can be easily excited by the tapped microstrip line for constructing the bandpass filter (BPF), because its E-field distribution is similar to the microstrip counterpart. For demonstration, a third-order dielectric strip resonator BPF centered at 10.5 GHz is designed, implemented, and measured. Good agreement between the simulated and measured results can be observed. The minimum in-band loss is only 0.6 dB.]]>287591593822<![CDATA[Narrowband Single-Pole Double-Throw Filtering Switch Based on Dielectric Resonator]]>$_{11delta }$ mode are studied to control the coupling between the DR and two output feeding lines. When one channel is on, the PIN diode for this channel is turned off, which does not introduce loss and affect the linearity. For the off-state channel, isolation is obtained by controlling the coupling between the DR and output feeding line, which is considerably enhanced. For demonstration, the DR filtering SPDT switch is implemented. The measured results exhibit that the proposed filtering SPDT switch has narrow bandwidth, low loss, high isolation, and high linearity.]]>287594596954<![CDATA[Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET]]>287597599507<![CDATA[On the Second-Harmonic Null in Design Space of Power Amplifiers]]>2876006021267<![CDATA[A <inline-formula> <tex-math notation="LaTeX">$K$ </tex-math></inline-formula>-Band SiGe Superregenerative Amplifier for FMCW Radar Active Reflector Applications]]>$K$ -band integrated superregenerative amplifier (SRA) in a 130-nm SiGe BiCMOS technology is designed and characterized. The circuit is based on a novel stacked transistor differential cross-coupled oscillator topology, with a controllable tail current for quenching the oscillations. The fabricated integrated circuit occupies an area of 0.63 mm^{2}, and operates at the free-running center frequency of 25.3 GHz. Characterization results show circuit operation from a minimum input power level required for a phase coherent output as −110 dBm, and the input power level corresponding to the linear to logarithmic mode transition of −85 dBm, the lowest reported for $K$ -band integrated logarithmic mode SRAs to date to the knowledge of the authors. The measured output power is +7.8 dBm into a 100 $Omega$ differential load. The power consumption of the circuit is 110 mW with no quench signal applied, and 38 mW with 30% duty cycle quenching. The quench waveform designed for the reported measurement result is also discussed.]]>287603605690<![CDATA[A Two-Stage <inline-formula> <tex-math notation="LaTeX">$S-/X$ </tex-math></inline-formula>-Band CMOS Power Amplifier for High-Resolution Radar Transceivers]]>$S-/X$ -band power amplifier (PA) integrated into a 0.18-$mu text{m}$ RF CMOS process. A switchable transformer for output matching is operated by tuning its primary winding and a shunt capacitor under a 50-$Omega $ load with passive efficiency of more than 63%/67% for the $S-/X$ -band. Series resonant circuits with bond wires are employed at common-mode nodes, greatly improving the $X$ -band performance of the PA. Despite the use of interstage matching without any tunable elements, the PA presents a power gain of more than 19.5 dB at both 3 and 8 GHz. The PA provides saturated output power of 24.8/21.5 (21.5) dBm with a power-added efficiency of 32.8%/11.1% (10.7%) at 3/8 (9) GHz. The 1-dB bandwidth is 0.6/2 GHz (2.8–3.4/7.5–9.5 GHz) for the $S-/X$ -band. This amplifier demonstrates suitable performance for dual-band high-resolution radar transceivers.]]>2876066082186<![CDATA[<inline-formula> <tex-math notation="LaTeX">$K$ </tex-math></inline-formula>-Band CMOS-Based MESFET Cascode Amplifiers]]>287609611942<![CDATA[High-Power 268-GHz Push-Push Transformer-Based Oscillator With Capacitive Degeneration]]>287612614801<![CDATA[A 6-bit CMOS Active Phase Shifter for <italic>Ku</italic>-Band Phased Arrays]]>$mu text{m}$ CMOS technology for Ku-band phased arrays. Improved transformer balun with wriggly stub is applied to split the single input to differential and achieve high balance with reduced chip area. Two-stage polyphase filter (PPF) generates broadband I/Q signals with high accuracy. A main digital-to-analog convertor (DAC) controls the I/Q amplitude to achieve 6-bit phase resolution, while an auxiliary DAC compensates the amplitude/phase error introduced by balun and PPF. Consequently, high resolution along with low phase/gain error can be achieved. The phase shifter shows measured rms phase error of <4° at 12–18 GHz and <3° at 13–18 GHz. The measured mean gain is −2.5–1 dB, and the rms gain error is <0.9 dB at 12–18 GHz. The total power consumption is 37.5 mW, and chip size is $0.75 times 0.32$ mm^{2} excluding pads.]]>2876156171317<![CDATA[Direction Finding of BPSK Signals Using Time-Modulated Array]]>287618620545<![CDATA[An Under Sampling Scope for Characterization of 42-Gs/s DAC in 28-nm FD-SOI]]>$Sigma Delta$ ) DAC is implemented to provide variable reference voltage for the comparator. Also, a digital engine controls the whole digitization process. Implemented in a 28 nm FD-SOI technology, the USS characterizes the DAC as good as a real-time monitor. The power consumption of the sample scope is only 28 mW from a 1 V supply voltage.]]>287621623857<![CDATA[Reverse Power Delivery Network for Wireless Power Transfer]]>287624626801<![CDATA[2-D DoA Anchor Suitable for Indoor Positioning Systems Based on Space and Frequency Diversity for Legacy WLAN]]>2, a mean error of 37 cm is observed, while the 90th percentile of the cumulative error distribution is 52 cm.]]>2876276291358<![CDATA[Single-Antenna FDD Reader Design and Communication to a Commercial UHF RFID Tag]]>2876306321063<![CDATA[IEEE Microwave and Wireless Components Letters information for authors]]>287C3C371