<![CDATA[ IET Power Electronics - new TOC ]]>
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TOC Alert for Publication# 4475725 2018April 23<![CDATA[Guest Editorial: Selected Papers from the 13th International Seminar on Power Semiconductors (ISPS 2016)]]>114627628330<![CDATA[Overcoming switching limits in silicon power MOSFETs with silicon-based solutions]]>1146296374182<![CDATA[Design considerations for charge-compensated fast-switching power MOSFET in the medium-voltage range]]>1146386454040<![CDATA[Progress in IGBT development]]>1146466533963<![CDATA[Snap-back free shorted-anode super-junction TCIGBT]]>+-anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap back in the current-voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two-dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the SA structure during turn-off process.]]>1146546593752<![CDATA[Improvement of an electro-thermal model of SiC MPS diodes]]>1146606671691<![CDATA[Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications]]>1146686744338<![CDATA[Modelling the threshold voltage of p-channel enhancement-mode GaN heterostructure field-effect transistors]]>1146756803160<![CDATA[Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology]]>RMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.]]>1146816883900<![CDATA[GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels]]>1146896943988<![CDATA[Reverse-recovery of diamond p-i-n diodes]]>2 to a blocking state at 400 V. The reverse recovery time was <;150 ns. The reverse-recovery depends on the on-state current level, reverse voltage, and switching rate, illustrated the fast switching of diamond p-i-n diodes.]]>1146956992053<![CDATA[Single-phase hybrid cascaded H-bridge and diode-clamped multilevel inverter with capacitor voltage balancing]]>1147007075706<![CDATA[Simplified transformer-based multilevel inverter topology and generalisations for renewable energy applications]]>1147087185628<![CDATA[Dual-phase DC–DC buck converter with light-load performance enhancement for portable applications]]>1147197265275<![CDATA[Load-independent harmonic mitigation in SCR-fed three-phase multiple adjustable speed drive systems with deliberately dispatched firing angles]]>1147277346547<![CDATA[Gain-scheduled constrained state feedback control of DC–DC buck power converter]]>1147357435050<![CDATA[Real-time gating signal generation and performance analysis for fully controlled five-phase, ten-pulse, line-commutated rectifier]]>1147447547933<![CDATA[Low-frequency harmonic resonance analysis and suppression method of modular multilevel converter]]>1147557634986<![CDATA[Modified hybrid model of boost converters for parameter identification of passive components]]>1147647713114<![CDATA[Matrix pencil method-based reference current generation for shunt active power filters]]>p-q theory and the synchronous reference frame in the time domain. The DFT, however, suffers from the picket-fence effect and spectral leakage. On the other hand, the DFT takes at least one cycle of the nominal frequency. The time-domain methods show a weakness under voltage distortion, which requires prior filtering techniques. The aim of this study is to present a fast yet effective method for generating the RCC for SAPFs. The proposed method, which is based on the matrix pencil method, has a fast dynamic response and works well under distorted and unbalanced voltage. Moreover, the proposed method can estimate the voltage phase accurately; this property enables the algorithm to compensate for both power factor and current unbalance. The effectiveness of the proposed method is verified using simulation and experimental results, and compared with the standard methods.]]>1147727807096