<![CDATA[ Electronics Letters - new TOC ]]>
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TOC Alert for Publication# 2220 2018May 21<![CDATA[in brief]]>5410606606143<![CDATA[interview]]>541060660678<![CDATA[parasitic performance]]>5410607607200<![CDATA[a security masquerade]]>5410608608266<![CDATA[Design of SIW cavity-backed self-triplexing antenna]]>5410611612373<![CDATA[High-gain 2 × 2 UWB antenna array with integrated phase inverter]]>5410612614502<![CDATA[Multi-mode broadband antenna for 2G/3G/LTE/5G wireless communication]]>5410614616571<![CDATA[28 GHz common-leg T/R IC in 65 nm CMOS technology]]>2. The DC current is 130 mA for the transmit mode and 98 mA for the receive mode at 2.5 V supply voltage.]]>5410616618552<![CDATA[Masked AES PUF: a new PUF against hybrid SCA/MLAs]]>5410618620311<![CDATA[Power-efficient class-AB telescopic cascode opamp]]>5410620622419<![CDATA[ROM and recursion free high accuracy approximation of base-2 logarithm using MacLaurin series]]>2) in hardware can be used to simplify many complex calculations such as power and division. There are several existing low error approximations of log_{2}, but those approaches are either slow or require a lot of memory. In this letter, the authors propose a new shift and add-based approximation of log_{2} using Maclaurin series. Experimental results show that with the proposed method maximum error is as less as 0.0102 and average error is reduced to 0.0050. Being independent of a number of bits this approximation can be used for any range of numbers. Results of hardware implementation show that area, power, and frequency of the proposed method are comparable with the existing methods.]]>5410622624312<![CDATA[Development of 2D LOD-FDTD method with low numerical dispersion in lossy media]]>5410624626216<![CDATA[Blind decoding of image steganography using entropy model]]>5410626628553<![CDATA[Gabor feature-based composite kernel method for hyperspectral image classification]]>5410628630379<![CDATA[Modified memory-improved proportionate affine projection sign algorithm based on correntropy induced metric for sparse system identification]]>5410630632534<![CDATA[Dual-mode Ramsey microwave cavity for a dual Rb/Cs atomic clock]]>5410632634458<![CDATA[62–92 GHz low-noise transformer-coupled LNA in 90-nm CMOS]]>2 and consumes 11.3 mW under a 1.2 V supply.]]>5410634636551<![CDATA[L-section matching with notches and its application for composite lowpass filter with spurious signal suppression]]>5410636638543<![CDATA[Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band]]>5410638640516<![CDATA[Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers]]>5410640641294<![CDATA[Real-time dark count compensation and temperature monitoring using dual SPADs on the same chip]]>5410642643396<![CDATA[Triple epitaxial single-photon avalanche diode for multichannel timing applications]]>5410644645301<![CDATA[Comparison of vibration energy harvesters with fixed and unfixed magnetic springs]]>5410646647451<![CDATA[Electrolytic capacitor-less high-brightness LED driving AC/DC converter for LED performance degradation reduction]]>5410648649431<![CDATA[Modular soft-switching converter in DC micro-grid system applications]]>V_{in}/3. Finally, experiments with a laboratory prototype are provided to verify the theoretical analysis and circuit performance.]]>5410649651338<![CDATA[Optimised power control with extended phase shift in dual-active-bridge dc–dc converters]]>5410651653430<![CDATA[Regenerative-passive snubber two-switch forward converter]]>5410653655456<![CDATA[Target response analysis for forward-looking SAR with simultaneous cross-track transceiver translation]]>5410655657270<![CDATA[High-speed FP GaN HEMT with <italic>f</italic><sub>T</sub><italic>/f</italic><sub>MAX</sub> of 95/200 GHz]]>f_{T}) of 95 GHz and maximum oscillation frequency (f_{MAX}) of 200 GHz is reported. Both lateral scaling of source-to-drain distance to 1 μm and vertical scaling of gate-to-channel depth to 90 nm, along with n^{+}-GaN ohmic contact, were utilised to minimise the parasitics, and the gate-length scaling of FP GaN HEMTs down to 90 nm gate length was demonstrated with a record speed performance for the first time. The small-signal model predicts that the f_{T} is still dominated by the gate-to-source capacitance, implying that the speed performance of FP GaN HEMTs can further improve.]]>5410657659367<![CDATA[Parameter estimation of LFM signal intercepted by improved dual-channel Nyquist folding receiver]]>5410659661264<![CDATA[Compact and high isolated triangular split-ring diplexer]]>λ_{0} × 0.102λ_{0}, and a measured isolation of no less than 38 dB.]]>5410661663500<![CDATA[Channel observation-based scaled backoff mechanism for high-efficiency WLANs]]>W) in binary exponential backoff (BEB) scheme of currently deployed WLANs. COSB is employed to adaptively scale-up and scale-down the W size during the backoff mechanism for collided and successfully transmitted data frames, respectively. It can achieve higher throughput and shorter delay compared to the conventional BEB mechanism in highly dense WLANs.]]>5410663665412<![CDATA[Dual-band microstrip bandpass filter with independently-tunable passbands using patch resonator]]>200 mode and TE_{002} mode of patch resonator, forming the first passband (low frequency). Two orthogonal microstrip stubs bring the source-load coupling while they also work as resonators, providing the second passband (high frequency). Each passband can be tuned independently due to the independent-resonant paths and non-crossed couplings between working modes. The proposed filter shares a simple layout, and three transmission zeros are obtained and it results in good selectivity and good out-band rejection. The measured results agree with simulated results well.]]>5410665667522<![CDATA[Substrate integrated waveguide quasi-elliptic bandpass filter with parallel coupled microstrip resonator]]>5410667668441